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 BAS125W
Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage

1
3
2 1
BAS125W BAS125-04W
3
3
EHA07002
VSO05561
BAS125-05W
3
BAS125-06W
3
1
2
EHA07005
1
2
EHA07004
1
2
EHA07006
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package
BAS125W BAS125-04W BAS125-05W BAS125-06W
13s 14s 15s 16s
1=A 1 = A1 1 = A1 1 = C1
2 n.c. 2 = C2 2 = A2 2 = C2
3=C 3 = C1/A2 3 = C1/2 3 = A1/2
SOT323 SOT323 SOT323 SOT323
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t 100s) Total power dissipation BAS125W, TS = 93 C BAS 125-04W...06W Junction temperature Storage temperature , TS = 84 C Symbol VR IF IFSM Ptot Ptot Tj Top Tstg Value 25 100 500 250 250 150 -55 ... 150 -55 ... 150 mW C Unit V mA
Operating temperature range
Thermal Resistance Junction - soldering point1) BAS125W BAS125-04W...06W
1For calculation of R thJA please refer to Application Note Thermal Resistance
RthJS 230 265
K/W
1

Nov-15-2001
BAS125W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics
Diode capacitance VR = 0 V, f = 1 MHz IF = 5 mA, f = 10 kHz Differential forward resistance CT Rf
Unit max. nA
typ.
IR VF 385 530 800 400 650 950 100 150
mV
-
16
1.1 -
pF
2
Nov-15-2001
BAS125W
Forward current IF = f (TS ) BAS125W
100
mA
80 70
IF
60 50 40 30 20 10 0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp ) BAS125W
10 3
Permissible Pulse Load
IFmax / I FDC = f (t p)
BAS125W
10 2
K/W
IFmax / IFDC
-
10 2
10 1
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
3
Nov-15-2001
BAS125W
Forward current IF = f (TS ) BAS125-04W...06W ( IF per diode)
100
mA
80 70
IF
60 50 40 30 20 10 0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp ) BAS125-04W...06W
10 3
Permissible Pulse Load
IFmax / IFDC = f (tp)
BAS125-04W...06W
10 2
K/W
IFmax / IFDC
-
10 2
10 1
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Nov-15-2001
BAS125W
Forward current IF = f (VF )
TA = Parameter
10 2
BAS 125... EHD07115
Diode capacitance CT = f (VR)
f = 1MHz
BAS 125... EHD07117
1.0 CT pF 0.8
F
mA 10 1 TA = -40C 25 C 85 C 150 C
0.6
10 0
0.4
10 -1
0.2
10 -2 0.0
0.5
V VF
1.0
0.0
0
10
V VR
20
Reverse current IR = f (VR )
TA = Parameter
10 1
BAS 125... EHD07116
Differential forward resistance rf = f (IF ) f = 10 kHz
10 4 rf 10 3
BAS 125...
EHD07118
R
A 10 0
TA = 125 C
TA = 85 C
10 -1
10 2
10 -2
TA = 25 C
10 1
10 -3
0
10
V VR
20
10 0 10 -2
10 -1
10 0
10 1 mA
10 2
F
5
Nov-15-2001


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